Ap+ n junction has built-in potential of 0.8 V. The depletion layer width at a reserve bias of 1.2 V is 2`mu`m. For a reserve bias of 7.2 V, the depletion layer width will be
4 `mu`m
4.9 `mu`m
8 `mu`m
12 `mu`m
Relation between built in potential, reverse biased volt, depletion width?